SiC devices are very dependent on high-quality epitaxial thin films, which is SemiSouth's core technology. SemiSouth is combining its thin film SiC epitaxial material growth technology with quality SiC substrate suppliers to offer SiC epitaxial wafers to silicon-based semiconductor suppliers that are interested in providing SiC-based product but do not have the epitaxial capability.

In addition to the thin film expertise, SemiSouth has developed Schottky Barrier Diodes, Vertical Junction FETs (VJFETs), PiN Diodes, and other discrete devices for various applications. The company has also developed simple integrated circuits (ICs) based upon SemiSouth's patented technology. This expertise is being accessed by both government and commercial customers to develop custom discrete devices and ICs for their specific applications. These applications use innovative designs that make use of the intrinsic properties and parameters of SiC discrete components that would not be possible with silicon-based components. Application size, power efficiency, and circuit simplicity are all attributes of silicon carbide.