SemiSouth is a proven contributor to the government's contract research and development needs in SiC epitaxial growth and device design and fabrication. Defense-related R&D is funded by the Air Force, Navy, Army, Missile Defense Agency (MDA), and DARPA through both direct contracts as well as the SBIR/STTR program. Civilian-related R&D is funded for missions as diverse as future planetary exploration on Venus to smart power integrated circuits for high-temperature applications under-the-hood in future hybrid electric vehicles by NASA and the Advanced Technology Program (ATP) funded by the Department of Commerce.

SemiSouth's patented vertical trench FET technology forms the basis for multiple device developments ranging from high-voltage 20-MHz enhancement-mode power FET switches to L-band static induction transistors for high-power RF amplifiers, to self-aligned MESFET microwave transistors, to a future of SiC power supply and RF/microwave amplifier monolithic chip solutions based on lateral trench FET logic. Government investment in SemiSouth's in-house expertise in epitaxy has resulted in state-of-the-art epi growth control ranging from multiple-layer submicron epi stacks for microwave transistors to 100 micron thick epi for the highest voltage power devices.

For further information, please contact:

Jeff Casady
662.324.7607 x16