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- Custom power discrete devices based upon our:
- Vertical JFET technology for power switching
- Schottky rectifier technology for zero recovery
- Junction Barrier Schottky technology with surge capability
- Static Induction Transistors (SIT) technology for power RF
- PiN Diode Technology for high voltage
- MESFET Technology for power microwaves
- Simple analog and digital ICs utilizing SemiSouth's patent-pending ability to integrate lateral and vertical FET and Schottky technologies monolithically
- Devices capable of up to 3300 volts breakdown or blocking voltage
- Proven cascade capability to achieve higher voltages or current
Capabilities
Product Development
Packaging and Test Capability
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