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SemiSouth Announces New Reference Design for its Energy-Efficient 1200 V SiC FET
SemiSouth SGDR600P1 reference gate driver (above) for its 1200 V, 63 mΩ, normally-off SiC JFET is compact, cost effective, and easyto use. The peak gate
current of the driver is +6 A / - 3 A, and is extremely helpful to customers
who are designing in or ramping new designs using SemiSouth’s SiC FET since
full schematics and bill of materials is provided in the datasheet. “This new reference design allows our
customers to add a standard gate driver with a bill of materials cost that is
extremely low, since we are using all standard, off the shelf commercial components
for the very compact (28 mm x 19 mm) reference driver board,” commented
According to Dr.
SiC is an emerging semiconductor technology enabling energy efficient operation of power conversion and power management in telecom power supplies, inverters in solar and high-frequency welding, future automotive electric vehicle platforms, and many other products. The true promise of SiC is its ability to make power supplies and power inverters up to 50-75% more energy efficient, operate at up to four to eight times higher frequency, and as a result run cooler and be physically much smaller in size. As an example, SiC power JFETs are expected to increase the 'fuel' efficiency of hybrid electric vehicles and help make them more affordable for consumers.
About SemiSouth Laboratories, Inc.
SemiSouth, a
privately owned corporation with offices in
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