STARKVILLE, MS, May 7, 2004 – SemiSouth Laboratories, Inc., a leading developer of silicon carbide discrete transistors, diodes, circuits, and merchant epitaxy, announced today four more new DoD SBIR contract wins.

In the 1st contract, sponsored by DARPA and monitored by Wright-Patterson Air Force Base, SemiSouth is developing a thicker epitaxy layer needed for very high voltage products.  Dr. J. Zhang, Director of SiC Epitaxy, commented that “SiC has always been known for high-power density, high-voltage products, but we are working in this contract to develop epitaxy layers above 50 micron thick.  This opens up SiC applications for single diode/transistor products above 5 kV, which will help our epitaxy product group deliver to new customers in our merchant SiC epitaxy business.”

In the other contracts, sponsored by MDA, and also monitored by Wright-Patterson Air Force Base, SemiSouth is looking at development of SiC RF transistors (MESFETs and SITs) into near-term RADAR applications, and integrated circuits into space based applications.  This effort will help leverage other related work, by implementing new fabrication techniques to improve the performance and lower cost of L and S-Band parts, as well as opening up a new class of applications involving SiC circuits.  I. Sankin, a senior device engineer at SemiSouth, stated that “We are excited about these contracts to explore proprietary SemiSouth technology as a way to accelerate the technology readiness of SiC for several key near-term RADAR system programs.” 

J.B. Casady, President and CTO of SemiSouth, wrapped up by commenting “We are working with several key customers who have already received sample parts from us, and are looking forward to the improved products these contracts will help us develop.  DARPA, Missile Defense Agency, and Air Force have really been keen on developing these products for critical defense needs, and we intend on delivering for them.”