SemiSouth - Enabling Brigher Shades of Green, Silicon Carbide	SiC, Silicon Carbide inverter, SiC inverter, Silicon Carbide converter, SiC converter, Silicon Carbide power supply, SiC power supply, Silicon Carbide fet, SiC fet, Silicon Carbide jfet, SiC jfet, Silicon Carbide mosfet, SiC mosfet, Silicon Carbide igbt, SiC igbt, Silicon carbide transistor, SiC transistor, Silicon Carbide diode, SiC diode, Silicon Carbide device, SiC device, High Efficiency Silicon Carbide, High Efficiency SiC, Silicon Carbide solar inverter, SiC solar inverter, High Temperature Silicon Carbide, High Temperature SiC  
 
 
SemiSouth - Enabling Brigher Shades of Green, Silicon Carbide	SiC, Silicon Carbide inverter, SiC inverter, Silicon Carbide converter, SiC converter, Silicon Carbide power supply, SiC power supply, Silicon Carbide fet, SiC fet, Silicon Carbide jfet, SiC jfet, Silicon Carbide mosfet, SiC mosfet, Silicon Carbide igbt, SiC igbt, Silicon carbide transistor, SiC transistor, Silicon Carbide diode, SiC diode, Silicon Carbide device, SiC device, High Efficiency Silicon Carbide, High Efficiency SiC, Silicon Carbide solar inverter, SiC solar inverter, High Temperature Silicon Carbide, High Temperature SiC



Senior/Principal Device Engineer

SemiSouth has an immediate opening for a Senior/Principal Device Engineer working with SiC power device products.

Summary: 
This position is a key member of the technology development and R&D team.  Candidates will perform device design and analysis of current and next generation SiC based power devices.  A strong understanding of semiconductor device physics and process technology with a background in either high voltage devices or wide bandgap (SiC, GaN) technology required.  This senior position will perform design and analysis to directly influence the company’s current and future technology direction and have a high profile with senior management.

Responsibilities:
  • Perform design, simulation, analysis, and testing of SiC based semiconductor devices.
  • Lead independent research into device design and its effect on performance and drive implementation into current products leading to improved device metrics or yield.
  • Coordinate with a team of scientists, engineers, and technicians to implement novel fabrication processes.
  • Provide technical expertise in preparing scientific and technical proposals for securing funding from various commercial and government funding agencies.
  • Written and oral presentations to communicate status of technology experiments and design changes to manufacturing and senior management
  • Use statistical methods in the design of experiments and to analyze the results from in-line and final test data.

Minimum Requirements:
  • M.S. / Ph.D. in Electrical Engineering/Physics/Material Science is required with a background in high voltage / power semiconductor technology.
  • 2-5 years experience in design and fabrication of semiconductor devices. 5-10 years experience in high-voltage semiconductor devices (wide bandgap technology a plus).
  • Knowledge and experience with TCAD device and process design software suites (e.g Silvaco/Synopsis/ISE)
  • Understanding of industry standard semiconductor qualification procedures with background in statistical Cp and Cpk analysis.
  • Knowledge of basic semiconductor reliability and failure mechanisms.
  • Candidate must be a US Citizen or Permanent Resident (Green Card holder).

Behavioral/Values Characteristics:
  • Strong personal work ethic.
  • Strong attention to detail.
  • Self-starter, high-energy, strong drive for accomplishment.
  • Work well independently towards achieving the goals of the group.
  • Excellent written and verbal communication.
  • Resourceful, problem-solving individual with initiative and drive to work around technical obstacles.
  • Demonstrated understanding of appropriate handling of confidential information.

SemiSouth is an equal opportunity employer.

 


  SemiSouth - Enabling Brigher Shades of Green, Silicon Carbide	SiC, Silicon Carbide inverter, SiC inverter, Silicon Carbide converter, SiC converter, Silicon Carbide power supply, SiC power supply, Silicon Carbide fet, SiC fet, Silicon Carbide jfet, SiC jfet, Silicon Carbide mosfet, SiC mosfet, Silicon Carbide igbt, SiC igbt, Silicon carbide transistor, SiC transistor, Silicon Carbide diode, SiC diode, Silicon Carbide device, SiC device, High Efficiency Silicon Carbide, High Efficiency SiC, Silicon Carbide solar inverter, SiC solar inverter, High Temperature Silicon Carbide, High Temperature SiC